2.1 Full in‑house manufacturing workflow
Crystal growth → slicing → lapping → annealing → CMP polishing → clean‑room packaging, no intermediate outsourcing for stable quality control.
Large‑Diameter Single Crystal Sapphire Wafer Substrate (In‑House Crystal Grown)
- Model
- FG-CSOC-LD201
Item specifics
- Material
- Single‑crystal α‑Al₂O₃ Sapphire, Purity ≥99.996% (In‑house crystal growth)
- Available Diameter
- 2",3",4",6",8", up to 12"(300mm), custom sizes supported
- Crystal Orientation
- C‑plane(0001), A‑plane(11‑20), M‑plane(10‑10), R‑plane(1‑102)
- Surface Finish
- SSP Single‑Side Polished / DSP Double‑Side Polished / Lapped / As‑Slic
- TTV
- 100μm‑2000μm, customizable
- Roughness Ra
- ≤0.5nm (Polished surface)
- Manufacturing Process
- Ingot growth → X‑ray orientation → Multi‑wire slicing → Lapping → Annealing → CMP polishing → Clean‑
- Packaging
- Class‑100 clean wafer box, anti‑static packaging
- Application
- GaN epitaxy, LED, semiconductor RF device, aerospace IR window, deep‑sea ROV viewport, thin‑film dep
Review
Description
Hong Kong Felix Optical Glass Co., Limited delivers high‑quality custom precision sapphire wafers manufactured fully in‑house. Made from monocrystalline α‑Al₂O₃, these substrates support SSP / DSP polishing for GaN epitaxy, aerospace EO/IR, deep‑sea ROV, high‑temperature optical and semiconductor applications. Strict clean‑room production guarantees low TTV, high flatness and ultra‑low surface roughness for high‑yield epitaxial processing. This product belongs to Custom Sapphire Optical Components, optimized for semiconductor and aerospace optical engineer search intent. All parameters shown are typical reference values. Final dimension, crystal orientation, polishing grade and tolerance shall be confirmed by official engineering drawings and project specifications. Our monocrystalline sapphire wafer series solves core engineering requirements for semiconductor epitaxy, aerospace and deep‑sea optical systems, delivering high flatness, low defect density and outstanding environmental stability. C‑plane, A‑plane, R‑plane, M‑plane to match LED, Micro‑LED, power‑semiconductor and optical‑grade application requirements. Excellent high‑temperature, plasma and corrosion resistance for aerospace, deep‑sea and harsh industrial operating environments. Explore more optical parts in Felix Glass product catalog. Monocrystalline α‑Al₂O₃ sapphire wafers are widely deployed across semiconductor epitaxy, aerospace optoelectronics and deep‑sea observation equipment. TTV, bow, warp and surface roughness directly determine epitaxy yield. Submit drawing for manufacturability review. Hong Kong Felix Optical Glass implements full‑chain control inside clean‑room facilities for large‑diameter sapphire wafer production. High‑quality monocrystalline α‑Al₂O₃ sapphire ingot preparation. Precision wire‑saw slicing to target wafer thickness. Surface lapping plus thermal annealing to eliminate slicing internal stress. Rough/fine polishing, final CMP chemical‑mechanical polishing and RCA clean‑room cleaning. View our manufacturing strength on About Us. Large‑diameter sapphire wafers support multiple crystal planes and polishing grades for different semiconductor and optical projects. Every wafer batch goes through TTV, bow, warp, surface roughness and defect inspection inside clean‑room before delivery. Customers can specify inspection standards according to epitaxy or optical design requirements. Find more design suggestions in our technical blog. Below lists common custom options. Our engineers will evaluate manufacturability after receiving your CAD drawings. After drawing review, crystal orientation and polishing specification confirmed, lead‑time reference as follows: For epitaxy trial, optical performance and process verification. Process validation before formal mass‑production. Actual delivery depends on ingot blank stock, CMP capacity and clean‑room scheduling. Class‑100 clean‑room wafer carrier + vacuum‑sealed export‑grade packaging, suitable for air freight to semiconductor fabs. Below are typical performance descriptions. Real indicators must match project drawings and fab incoming‑inspection specification. C‑plane (0001) is industry standard for GaN‑based LED / Micro‑LED epitaxy. Send your device specification for further consultation. Yes, we support up to 12‑inch custom sapphire wafers. Please share your equipment chuck drawing for manufacturability evaluation. We can provide TTV, bow‑warp, surface‑roughness inspection reports for each batch for fab incoming‑quality audit. SSP: only working side CMP polished; DSP: both‑side CMP polished, better flatness for high‑end lithography‑related epitaxy process. Yes, we support small‑batch R&D prototype for semiconductor research institutes and aerospace project teams. Notch, primary‑flat and secondary‑flat orientation marking are available according your wafer‑handling equipment requirements. Please provide target diameter, thickness, crystal orientation, polishing grade, notch/flat requirement and estimated quantity. Our optical‑semiconductor engineering team will return formal quotation and lead‑time within 24 working hours.
Hong Kong Felix Optical Glass Co., Limited · Model FG‑CSOC‑SPW030
Large‑Diameter Custom Sapphire Wafers | α‑Al₂O₃ Substrates
Material & optical advantages
2. Key Advantages of Custom Sapphire Wafers
2.2 Multiple crystal orientations available
2.3 Superior thermal‑chemical performance
Typical application scenarios
3. Main Application Fields for Sapphire Wafers
Drawing‑driven precision manufacturing
4. In‑House Sapphire Wafer Manufacturing Workflow
Crystal growth
Wire‑saw slicing
Lapping & stress‑relief annealing
CMP polishing & RCA clean
Sapphire crystal growth
Precision wire‑saw slicing
Lapping & stress‑relief annealing
Rough & fine polishing
CMP final chemical‑mechanical polishing
Clean‑room RCA cleaning & inspection
Vacuum wafer carrier packaging
Material selection guide
5. Substrate Optical‑Mechanical Performance
Material Selection Guide
6. Customizable Specification Parameters
Specification item
Available options
Project confirmation factor
Material
Single‑crystal α‑Al₂O₃ Sapphire
Optical / semiconductor application spectrum & operating environment
Available Diameter
2",3",4",6",8", up to 12", custom sizes
Epitaxy equipment chuck size, assembly mechanical constraints
Thickness Range
0.25 mm‑1.0 mm, custom thickness upon request
Wafer handling strength, device‑process requirements
Crystal Orientation
C‑plane (0001), A‑plane (11‑20), R‑plane (01‑12), M‑plane (10‑10)
Epitaxial film growth requirement, device design
Polishing Grade
SSP(Single‑Side Polished), DSP(Double‑Side Polished), Lapped
Epitaxy process, optical transmission demand
TTV
≤10 μm (epitaxy grade, customizable)
Photolithography & epitaxy yield target
Surface Roughness Ra
≤0.5 nm (CMP polished surface)
Epitaxy layer quality, scattering‑loss requirement
Notch / Flat Marking
Notch, primary flat, secondary flat, custom orientation mark
Wafer‑handling equipment compatibility
Packaging
Class‑100 clean‑room wafer carrier, vacuum sealed
Fab incoming‑particle‑control requirement
Sample & mass‑production lead‑time
7. Production Cycle for Prototypes & Volume Orders
Prototype samples: 15‑20 working days
Pilot small‑batch: 20‑28 working days
Mass‑production orders: 28‑40 working days
Technical FAQ
8. Sapphire Wafer Frequently Asked Questions
Which crystal plane for GaN LED epitaxy?
Can you provide 12‑inch large‑diameter sapphire wafer?
Can you supply metrology test reports for each batch?
What is difference between SSP and DSP sapphire wafer?
Do you accept small‑quantity R&D prototype orders?
Can you do custom notch / flat orientation marking?
RFQ preparation checklist
Submit project requirements
Request Quotation & Custom Drawing Review
